Talk:MODFET

Merge with HEMT?[edit]

I wonder if this is a bit misleading and maybe this entry should be combined with the HEMT entry since MODFET is, as far as my understanding goes, a precursor name to the 'HEMT'. On the other hand it might just be one of the family, see this patent:

http://www.patentstorm.us/patents/5721161-description.html

Which says: "A lattice-matched high electron mobility transistor (HEMT) is a type of MODFET, where a narrow-bandgap semiconductor material is lattice-matched to the wide-bandgap semiconductor material. A pseudomorphic high electron mobility transistor (pHEMT) is another type of MODFET where the narrow-bandgap semiconductor material is strained in relation to the wide-bandgap semiconductor material".

Also, I think that the GaAs-based MODFET may predate the SiGe ones as far as commercialisation goes - GaAs HEMTs were around two decades ago whereas SiGe devices are fairly recent. Royzee (talk) 15:17, 29 February 2008 (UTC)[reply]

Not sure if this helps, but I was under the impression that a HEMT was a type of MODFET. In my recent advanced electronic devices course though, they are treated as separate devices, but both using modulation doping to increase the mobility.

Skela (talk) 06:01, 18 April 2008 (UTC)[reply]

Things to add[edit]

Yes I have the ambition so separete the formulation (nomenclature) in this article. MODETs can be in a strained lattice but also in a mathed lattice. And of course change the Si/SGe to GaAs/GaAlAs and just mention more rare MODFTS like Si/SiGe as one of others like InP GaN SiC and so on. There are also two fundamental missing pictures, one showing the bandgap as a function of dept (so you can se the charges falling into the well). The other showing a cross-section of a MODFET gith the source, drain and gate. The article in this shape doesnt do much harm, but since In have been working with the subject for twenty year —Preceding unsigned comment added by Gustengren (talk • contribs) 19:37, 31 March 2009 (UTC)[reply]