File:Bjt forward active bands.svg

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Summary[edit]

Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. ${\displaystyle E_{c}}$ is the conduction band, ${\displaystyle E_{f}}$ indicates the quasi-fermi energy levels, ${\displaystyle E_{i}}$ is the intrinsic Fermi level of the undoped semiconductor, and ${\displaystyle E_{v}}$ is the valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.

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