File:Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide (Figure 1).png

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English: (1a) Schematic of the p+–n–n+ SiC diode with a color center in the n-type layer. The 2D map shows the acceptor doping profile, which reproduces the experimental conditions in ref. 19. (1b), (1c) Simulated spatial distributions of electrons (a) and holes (b) along the dashed line shown in panel (a)
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Enhancing the brightness of electrically driven single-photon

sources using color centers in silicon carbide
Author Igor A. Khramtsov, Andrey A. Vyshnevyy, Dmitry Yu. Fedyanin

Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russian Federation

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Captions

(1a) Dependence of the single-photon emission rate. (1b) The ratio of the electron capture rate to the hole capture rate. (1c) Photon emission rate as a function of the current density. (1d) g(2) curves

21 February 2018

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