File:4 inch float zone n-type silicon wafer with amorphous silicon thin film heterojunction structure.png

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Summary

Description
English: A scientist holding a 4 inch diameter n-type float-zone silicon wafer that has been through PECVD to coat a thin film (tens of nanometres) of amorphous silicon onto it. This creates a passivation layer such as what is used in silicon heterojunction solar cells. Typically, high quality amorphous layers in a SHJ solar cell would be on the order of less than 10 nm. However the thin film is thicker for this research cell due to technical limitations (50–200 nm). This research cell was used to research how high temperatures affect the passivation layer of heterojunction solar cells.
Date
Source Own work
Author Radiotrefoil
Camera location33° 55′ 04.26″ S, 151° 13′ 37.38″ E Kartographer map based on OpenStreetMap.View this and other nearby images on: OpenStreetMapinfo

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Captions

A 4 inch diameter float zone silicon wafer that has been through PECVD to coat a thin film of amourphous silicon on it. This creates a passivation layer such as what is used in heterojunction solar cells.

3 February 2020

33°55'4.26"S, 151°13'37.38"E

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Date/TimeThumbnailDimensionsUserComment
current02:27, 24 October 2023Thumbnail for version as of 02:27, 24 October 2023562 × 601 (313 KB)RadiotrefoilUploaded own work with UploadWizard
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